| 摘要 |
A method and apparatus for detecting hydrogen sulfide with improved longevity. The hydrogen sulfide detector includes a semiconductor comprised of indium oxide attached to an inert substrate. A noncontinuous film of an inert conductor such as gold is deposited on the semiconductor and means are provided for measuring a change in conductance of the semiconductor. In one embodiment tin oxide may be substituted for indium oxide. Also a method of detecting hydrogen sulfide including the steps of: coating a semiconductor with a noncontinuous film of an inert conductor, maintaining the temperature of the semiconductor in a range sufficient to insure proper response and recovery actions of the semiconductor when it is exposed to hydrogen sulfide; and exposing the coated semiconductor to a gas containing hydrogen sulfide while measuring the change in conductance in the semiconductor. The semiconductor may be made up of tin oxide or indium oxide and the inert semiconductor may be gold. The operational temperature for the semiconductor is preferably in the range of 150 DEG to 300 DEG C. In one embodiment the thickness of the semiconductor is at least 500 angstroms.
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