| 摘要 |
PURPOSE:To form a region, height thereof on a semiconductor substrate is higher than sections shaped to other regions, previously to at least one part of a region having no effect on the electric characteristics of the semiconductor device in the surface of the substrate before a patterning process. CONSTITUTION:A thick SiO2 layer 8 higher than other regions is formed into the region having no effect on the electric characteristics of the integrated circuit in a process before an aluminum layer 6 is evaporated onto the semiconductor substrate 1. A photo-mask 7 placed onto a photo-resist film 6 applied onto the aluminum layer 6 is fast stuck to the photo-resist film only in the upper sections 6'' of the thick SiO2 layer 8 because of the thick SiO2 layer 8. Accordingly, the abnormality of the pattern of the photo-resist on a region 9 leaving a pattern as an aluminum wiring layer under the influence of the photo-mask is not generated, and the abnormality of the pattern of the aluminum layer is not also generated. |
