| 摘要 |
PURPOSE:To grow the crystal granule of the first thin film efficiently, by laminating the second and the third thin films to the first thin film, irradiating the 1 a minate with light ( or electron) beam so that the third thin film is heated, heating the first thin film by the heat conduction produced by the irradiation. CONSTITUTION:The silicon base plate 11 is provided with the silicon oxide film 12 by thermal oxidation, the polycrystalline silicon film 13 (the first thin film) having a thickness of about 5,000Angstrom is deposited on the base plate by chemical deposition, the film is converted into the oxidized film 14 in such a way the polycrystalline silicon region 13' lie island is left and surrounded by the oxide film, and the thin thermally oxidized film 15 (the second thin film) having a thickness of about 500Angstrom is formed on the region 13'. The titanium oxide film 16[the third thin film (surface absorption layer)]having a thickness of about 500Angstrom is deposited on the thin thermally oxidized film, irradiated with carbon dioxide gas laser light (wavelength of 10.6mu) 17, the light is absorbed in the titanium oxide film 16 so that it is heated, and the polycrystalline silicon film 13' is heated by the heat conduction from the film 16 to increase the particle diameter of the crystal. |
