| 摘要 |
PURPOSE:To use a transistor requiring high CB dielectric resistance and a transistor requiring low collector resistance simultaneously in one bipolar integrated circuit. CONSTITUTION:Two regions of a region, into which As is buried, and a region, which differs from the region, into which As is buried, and into which Sb is buried, are formed to the same silicon substrate. For example, the buried layer of Sb of the transistor requiring high dielectric resistance and the buried layer of As of the transistor requiring low collector resistance are each formed onto the same silicon substrate, and the bipolar type integrated circuit device is obtained. |
