发明名称 |
Reactive sputter etching of aluminum |
摘要 |
An improved sputter etching apparatus for etching a substrate with a reactive gas. The improvement in the apparatus comprises utilizing a cryogenic pump as the vacuum means to evacuate the plasma chamber. The improved apparatus of the invention is particularly useful for the reactive sputter etching of aluminum substrates utilizing a highly reactive gas such as boron trichloride.
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申请公布号 |
US4387013(A) |
申请公布日期 |
1983.06.07 |
申请号 |
US19810295513 |
申请日期 |
1981.08.24 |
申请人 |
RCA CORPORATION |
发明人 |
LEHMANN, HANS W.;FRICK, KLAUS;WIDMER, ROLAND W. |
分类号 |
C23F4/00;H01J37/18;H01J37/34;(IPC1-7):C23C15/00 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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