| 摘要 |
PURPOSE:To obtain the copper alloy for the lead frame of the integrated circuit having excellent strength, elongation, conductivity and heat-resistant property by adding Ni and Si at specified rate to a base body metal. CONSTITUTION:The copper alloy, which contains 3.0-3.5% Ni and 0.5-0.9% Si, the weight ratio of Ni:Si therein is 4:1-6:1 and the residual thereof consists of Cu substantially, is hot-worked, quenched from 750-500 deg.C, cold-worked, annealed at 450-600 deg.C, and finally cold-worked. An intermetallic compound between Ni and Si is deposited from Ni and Si brought to solid solutions through quenching treatment in the annealing process. The deposition of the intermetallic ompound is insufficient when an annealing temperature extends outside the range of 450-600 deg.C, and the alloy at that time connot satisfy characteristics required as a material for the lead frame of the integrated circuit in strength, conductivity, etc. |
