| 摘要 |
PURPOSE:To increase the thickness of a sealing liquid layer and reduce the dislocation density of a GaAs crystal grown by the pulling up method with the high-pressure liquid seal, by monitoring the crystal growth with a quartz rod with one end inserted in the sealing liquid for a raw material melt. CONSTITUTION:In a growing method of a GaAs single crystal by the high-pressure liquid seal in which a raw material melt 5, e.g. GaAs melt, in a quartz crucible 4 is sealed up with a sealing liquid 6, e.g. B2O3 melt, placed on the raw material melt 5, the monitoring of the growth of GaAs single crystal 8 in pulling up is carried out by using a quartz rod 10 (held by a shaft 11 for moving the quartz rod 10) with one end inserted in the sealing liquid 6 on the raw material melt 5 in the quartz crucible 4 heated with a heating coil 2 and the other end in contact with a monitoring peep hole 9 provided at a pressure vessel 1 under a high internal pressure to increase the thickness of the sealing liquid 6 sufficiently, reduce the reduction in the temperature gradient by the enough heat insulation near the growing boundary surface of the crystal and grow the aimed crystal having a slight dislocation density. |
