发明名称 SEMICONDUCTOR DEVICE HAVING MULTIPLE LAYER STRUCTURE
摘要 PURPOSE:To facilitate the manufacture of the semiconductor device 1 having the multiple layer structure, by collecting contact parts to the peripheral parts of stepped active layers, and wiring the contact parts in the upper and lower active layers by closely adhered conductors for interlayer wiring. CONSTITUTION:A substrate 1 supports the entire body of the semiconductor device. Many active and passive semiconductor elements are formed in the active layers 2. Insulating layers 3 are provided for electrically separating the active layers. The closely adhered wiring conductors 5 are connected between the layers for supplying the necessary electrical energy for operating the active semiconductor element gruop in each active layer and for sending and receiving data signals.
申请公布号 JPS5895860(A) 申请公布日期 1983.06.07
申请号 JP19810194708 申请日期 1981.11.30
申请人 MITSUBISHI DENKI KK 发明人 SUGAHARA KAZUYUKI;ITOU HIROMI
分类号 H01L27/00;H01L21/768;H01L23/522;H01L27/06 主分类号 H01L27/00
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