| 摘要 |
PURPOSE:To provide the manufacturing method of the semiconductor device with almost no leaking current, by smoothing the surfaces of oxide films and the surfaces of polycrystal silicon films, thereby providing high interlayer voltage resistance. CONSTITUTION:A first polycrystal silicon film 3, to which phosphorus is added, is grown on a first silicon oxide film 2 by a pressure reduced gaseous phase method. Then heat treatment is performed and an oxide film 8 for a diffused mask is formed. Thereafter, a polycrystal silicon layer 9 for oxidation is formed on said oxide film 8 for the diffusing mask. The polycrystal silicon layer 9 for the oxidation, the oxide film 8 for the diffused mask 8, the first polycrystal silicon film 3, and the first silicon oxide film 2 are sequentially and selectively removed, and source and drain regions 5 are formed. Thus a first transistor region is formed. Then a second silicon oxide film 6 is formed on a silicon substrate 1 by heat treatment. A second polycrystal silicon film 7 is formed thereon by, e.g. a pressure reduced gaseous phase growing method. By the same procedure as the first polycrystal region, a second transistor region and a wiring layer are formed. |
