| 摘要 |
PURPOSE:To increase a current cutoff limit at which the turn OFF operation can be performed safely, by providing a rectangular shape of the main surfaces of a semiconductor pellet so that one side of the rectangle is longer than the opposite side, and aligning the longitudinal direction of each emitter belt shaped region with the longitudinal direction of the main surfaces. CONSTITUTION:The pellet 21 of the thyristor has a four layer structure pE, nB, pB, and nE between a pair of the main surfaces 211 and 212 which are located at opposing sides each other. The nE layer and pE layers are exposed in one main surface 211, and the pE layer is exposed in the other main surface 212. The nE layer comprises a plurality of long belt shaped regions 213 which are arranged so that their longitudinal direction is aligned with the longitudinal direction of the main surfaces. Each emitter belt shaped region 213 has a width of about 0.3mm. and a length of about 4.0mm.. Two emitter belts shaped regions are provided. A cathode electrode 22 is contacted with the two emitter belt shaped regions 213 at a low resistance. A gate electrode 23 is contacted with the surface of the pB layer surrounding the emitter belt shaped regions 213 at a low resistance. An anode electrode 24 is contacted with the surface of the opposite pE layer at a low resistance. |
