PREPARATION OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL OF GROUPS 3[5 HAVING LOW DISLOCATION DENSITY

摘要

PURPOSE:To prepare a compound semiconductor single crystal of Groups III-V having a low dislocation density easily in the preparation of the single crystal by the growing method with a horizontal boat, by using a heat insulating means provided between the bottom of the boat and a reaction vessel. CONSTITUTION:A quartz boat 3 is placed on a semicylindrical quartz heat insulating material 10 having the same length as the quartz boat 3 and totally sandblasted surface at one end of a quartz reactor 4, and Ga 7 and a seed crystal 6 mixed with a dopant (Si) are introduced into the quartz boat 3. Arsenic 8 is introduced into the other end of the reactor 4 to seal up the reactor 4. The reactor 4 is then introduced into a two-temperature zone electric furnace, and the operation is conducted by the conventional growing method with the horizontal quartz boat 3 to form the aimed compound semiconductor single crystal of Groups III-V having a low dislocation density.