| 摘要 |
PURPOSE:To obtain a photosensitive element whose picture quality is excellent, by provding a photoconductive layer on the reverse side of the side where a scanning circuit of a semiconductor or substate is placed. CONSTITUTION:On one surface of a P type Si substrate 20, vertical transfer CCD electrodes 24a, 24b-24d of four-phase driving, consisting of poly-Si, etc. are provided through a gate oxide film 22. In a storage period of light charge, a depletion layer 26 shown by a dotted line is formed in the substrate of the electrode 24b. On the other hand, the reverse plate side of the substrate 20 is etched and thinned, and after that, a photoconductive layer 28 is covered, and also on said layer, a transparent conductive film 30 is covered. This film 30 is biased, for instance, to the negative potential, to the potential of the substrate 20, a positive hole in a carrier energized by light 32 which is made incident to the layer 28 moves to the electrode 30 side, and an electron is drawn by the potential, is collected in the depletion part 26 through the substrate 20, is stored for a vertical period, is transferred to a CCD storage part in the following blank period, and is read out as an electric signal in order. |
