| 摘要 |
PURPOSE:To improve reliability by leaving an insulating film only in the side section of difference in stages on a foundation substrate through etching, coating the second insulating film and a film to be processed and flattening the foundation substrate. CONSTITUTION:A field oxide film 2, a gate oxide film 3, a polycrystal silicon gate 4 and source-drain regions 5a, 5b are formed onto the P type silicon substrate 1. The silicon oxide film 6 is left only in the side section of the difference in stages of the gate 4. The silicon oxide film 7 is deposited, and the Al-Si alloy film (the film to be processed) 8 is deposited onto the whole surface of the substrate. The first photo-resists 9 are applied onto the film 8, and molybdenum silicide films 10 are evaporated. The second photo-resists 11 are applied onto the films 10, and the films 10 are selectively etched while using the resists 11 as masks, the resists 9 while employing the films 10 as masks and the films 8 while using the resists 9 as masks respectively. |
