| 摘要 |
PURPOSE:To enhance the level of electron mobility and to reduce resistance by a method wherein a layer consisting of two types of semiconductor respectively constituting electroconductive paths are selectively subjected to electromagnetic wave irradiation for the purpose of enhancing accumulation of an electron group. CONSTITUTION:A channel layer 2 and electron-donative layer 3 are formed on a substrate 1, and alloyed layers 6 are formed by heat treatment, which extend through the electron-donative layer 3 to include the upper part of the channel layer 2. Then, source/drain electrodes 5 are formed on the alloyed layers 6, and a gate electrode 7 is formed. Next, the entirety is kept at temperatures not higher than 77 deg.K and is subjected to electromagnetic irradiation as represented by visible light, which causes excitation within the electron-donative layer 3, enhancing electron surface density in the accumulated electron group 4 and the level of electron mobility. |
