| 摘要 |
PURPOSE:To form electrode wiring having low resistance by adding Ti, etc. to a target consisting of the silicide of Mo or W and executing pre-sputtering before the film of the silicide is shaped through a sputtering method. CONSTITUTION:Ti is doped to the MoSi2 target by 1-10%, and sputtered. Since Ti is easy to be combined with oxygen more than Si, Ti is combined with oxygen as a residual gas in a chamber when MoSi2 to which Ti is added is pre-sputtered as the target, and there is hardly oxygen in the chamber when sputtering. Accordingly, the electrode wiring consisting of an MoSi2 film, which has no oxygen and resistance thereof is low, can be shaped onto a substrate. Zr, Ta or Hf can be utilized besides Ti as an additive. |
