| 摘要 |
PURPOSE:To obtain the IC with multilayer structure by mounting wiring metals while being projected to the surfaces of the insulating films of a plurality of element pieces in which semiconductor elements are made to contain and stacking these element pieces. CONSTITUTION:The first and second element pieces are formed by silicon single crystal substrates 11, 12, a silicon single crystal film 2 in which an active element is shaped, the metal 4 for wiring, an insulating layer 5, an insulator layer 6 and a spinel layer 7. The first element piece and the second element piece are joined by the section of a broken line A-A', and a section between the metals 4 is connected with low-temperature solder. The substrate 11 is etched, metallic wiring is formed to the layer 7, and the metal 8 wired to the outside is set up. The third element piece is joined onto the structure in the section shown by a broken line B-B', and a section between metals 4 is connected with low-temperature solder. |
