| 摘要 |
PURPOSE:To prevent a semiconductor basal section from floating by a method wherein the semiconductor base section of a 2nd MOS transistor is connected to the semiconductor substrate whereupon a 1st MOS transistor is built. CONSTITUTION:A 1st N channel MOS transistor is constituted of a P type semiconductor substrate 21, source/drain regions, gate-insulating layer 25, gate electrode 26, etc. A 2nd N channel MOS transistor is constituted of a semiconductor base section 29', source/drain regions, gate insulating film 32, gate electrode 33, etc. The semiconductor base section 29' is connected to the semiconductor substrate 21 with the intermediary of a P type semiconductor column 36 provided with an opening 35, for the purpose of preventing the semiconductor base section 29' from floating. |
