| 摘要 |
PURPOSE:To reduce electrostatic capacitance between adjacent wiring by forming a wiring layer under a state that the layer is self-aligned with an uneven pattern. CONSTITUTION:An SiO2 film 22 is shaped to an Si substrate 21, and contact holes 231-233 are bored. A concave section is formed so as to be stacked to the hole 232. Al Films 241-243 are buried into the holes 231-233 as connecting members. An Al-Si film is coated through a sputtering method, and breaking at a stage is generated at a stage difference section, thus forming the Al-Si wiring layers 251-253 isolated. A resist pattern 26 is shaped, and the unnecessary sections of the wiring layers 251, 252 are removed. Electrostatic capacitance can be reduced because the difference at the stage is molded and the wiring layers 251-253 are opposedly arranged. |
