| 摘要 |
PURPOSE:To enhance the electron surface density of a group of accumulated electrons and the level of electron mobility by a method wherein the device is subjected to electromagnetic wave irradiation at low temperatures after the formation of a channel layer on a substrate, electron-donative layer, alloyed layer and electrodes. CONSTITUTION:A channel layer 2 and electron-donative layer 3 are formed on a substrate 1, and alloyed layers 5 are formed by heat treatment, which extend through the electron-donative layer 3 to include the upper part of the channel layer 2. Next, source/drain electrodes 4 are formed on the alloyed layers 5, an ohmic contact is established with the channel layer 2, and a gate electrode 6 is formed. Then, exposure to electromagnetic waves represented by visible light is effected to result in the accumulation of a group of electrons 7 in the neighborhood of the hetero-boundary, which results in the constitution of a normal-ion type transistor with high electron mobility. |
