| 摘要 |
PURPOSE:To obtain a photomask for semiconductors in photolithography for far ultraviolet rays provided with picture performance fully satisfying ultraprecision by providing the areas implanted with patternlike impurities on a quartz glass substrate. CONSTITUTION:In a photomask for semiconductor used in far ultraviolet photolithography, photoresist 3 is coated on a quartz substrate 1, and after picture patterns are formed by exposure of patterns and development, with the resist patterns as local protecting films, impurities 4 are implanted to the substrate 1 by an ion accelerator, and the resist films are stripped. Since the areas implanted with the impurities are the photomasks for far ultraviolet rays which are opaque to far ultraviolet rays, the accuracy of the mask is affected only by spreading of the impurity implantation, whereby the patterning of high accuracy is made possible, the transparent areas of the quartz glass are protected with the resist and the transmittance of light is improved. |
