| 摘要 |
<p>PURPOSE:To absorb level differences occuring in circuit patterns, etc. and to control the surface shapes thereof easily by using heat resistant org. insulating films as inter-layer insulating films of a semiconductor substrate formed with electrodes of picture elements. CONSTITUTION:Heat resistant org. insulating films 28 are formed after the formation of Al wirings 17 for the 1st layer is completed. Since the films 28 of polyimide or the like are coated relatively thickly on the wirings 17, the level differences on the surface of a silicon substrate 20 occuring in circuit patterns, etc. are absorbed and leveled off, thus the surfaces 28' of the films 28 are nearly flat. Controlling of pitch and depth by photoetching is easy in forming the recesses 29 on the surfaces 28' and the recesses 18' on the surface of electrodes 18 of picture elements are maintained at sufficiently high dimensional accuracy in pitch and depth, whereby the surface of the semicondutor substrate 1 is made to have a bright and white diffusion reflecting surface and contrast is improved satisfactorily.</p> |
