| 摘要 |
PURPOSE:To form a semiconductor single crystal thin film having excellent uniformity and flatness through epitaxial growth of a semiconductor film over an insulaing film form substrate by forming selectively a second insulating film on a semiconductor film of substrate surface and irradiating laser beams. CONSTITUTION:After forming a first SiO2 film 2 in the specified thickness by by thermal oxidation of an Si single crystal substrate 1, the film 2 is partly removed, exposing a part of the substrate 1. A polycrystalline Si film 3 is then deposited thereon by the CVD method under a reduced pressure and moreover a second SiO2 film 4 is deposited by the CVD method under a reduced pressure. Next, only the film 2 on the exposed substrate is selectively left by the photo- etching method and the remaining part is removed by the etching. Thereafter, a single crystal Si film 3' is formed from the substrate 1 to substrate 2 through the epitaxial growth by irradiating thereto a laser beam of the specified energy. The film 3' is formed as the semiconductor single crystal thin film having excellent uniformity and flatness, and an MOS transistor etc. is formed in the sperture of such film 3'. |
