| 摘要 |
PURPOSE:To entirely eliminate the contamination of the boundary surface of a polycrystalline Si gate oxidized film by forming a polycrystalline Si film and a gate oxidized film on an amorphous substrate continuously by the same device. CONSTITUTION:An amorphous substrate 1 is installed in an ordinary pressure CVD device, and a polycrystalline Si film 2 is accumulated by the thermal decomposition of SiH4. Then, O2 gas in introduced into the same device, and a mixture gas of SiH4+O2 is thermally decomposed, thereby accumulating an SiO2 film 3 of the prescribed thickness on the film 2. This film becomes the gate oxidized film of the FET. The boundary surface of the polycrystalline Si gate oxidized film becoming the active region of the FET can be manufactured in the FET having stable threshold value without being affected by the contamination during the steps via a series of the steps. |
