发明名称 POSITIVE TYPE RADIATION RESIST
摘要 PURPOSE:To improve sensitivity and dry etching resistance by using a copolymer of methyl methacrylate and oxime methacrylate having acyl oxyimino groups and having 10,000-800,000 number average mol.wt. CONSTITUTION:A copolymer of 70-99mol% methyl methacrylate and 1- 30mol% oxime methacrylate having acyl oxyimino groups is used as resist acting in positive type to radiations such as far ultraviolet rays, electron rays, X- rays gamma-rays and alpha-rays, and the number average mol.wt. of the copolymer is made 10,000-800,000, whereby the resist having high sensitivity, high resolution and heat resistance and excellent dry etching resistance is obtained. Said copolymer is obtained by block polymn. using a, a'-azobisisobutyronitrile as an initiator.
申请公布号 JPS5893048(A) 申请公布日期 1983.06.02
申请号 JP19810191490 申请日期 1981.11.27
申请人 MATSUSHITA DENKI SANGYO KK 发明人 TANAKA MAKOTO;KADOOKA MASAHIRO;KONISHI BUNYA;TAKEYAMA KENICHI
分类号 G03F7/20;C08F20/00;C08F20/34;C08F220/04;C08F220/10;C08F220/34;G03F7/004;G03F7/039 主分类号 G03F7/20
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