| 摘要 |
<p>PURPOSE:To obtain a photographing stripe filter of a simple structure in a short process of production, by using an amorphous hydrogenated silicon nitride film to a yellow filter and therefore eliminating an intermediate layer. CONSTITUTION:An amorphous hydrogenated silicon nitride film 22 is stacked on a glass substrate 21 in an atmosphere of a mixture gas of 1.80X10<-3> Torr hydrogen pressure, 3.0X10<-4> Torr nitrogen pressure and 1.34X10<-3> Torr argon pressure respectively. A stripe pattern having a desired pitch is formed with a resist 23. The area where no resist is coated is etched directly with use of the carbon tetrafluoride gas and by a reactive sputtering etching process. A cyanogen filter 24 uses a multi-layer structure containing TiO2 and SiO2 and stacked on the film 22 by an electronic beam vapor deposition process to obtain a stripe filter in the same process as that of the yellow filter.</p> |
