| 摘要 |
PURPOSE:To restrict growth of polycrystals and to form a unfifrom singlecrystal film by a method wherein the scanning direction of irradiation of laser beams or the like are set at the direction <211> utilizing the face that an Si crystra extends in the direction <211> when developed in a molten Si solution. CONSTITUTION:An Si wafer 21 having the cut direction of (110) is heat-treated to form an oxidation film 22. Then, an open groove is formed in parallel to the cut direction (110) through etching, and a polycrystalline Si film 31 is formed on the film 22 with the depressurized CVD process. Then, beams of high energy density such as a laser or electron beams is scanned and irradiated thereon to effect epitaxial growth of the Si layer in the film 31, thereby to monocrystalize the film 31. The scanning direction of the beam is set at the diretion <211> perpendicular to the extending direction of the SiO2 zone to form a uniform singlecrystal film while restricting growth of polycrystals. Then, an n-channel MOS transistor 32 is formed on the thus-attained singlcrystal film. |
