| 摘要 |
PURPOSE:To obtain a single crystal film having excellent crystal characteristics on an insulating substrate by depositing an amorphous semiconductor on a semiconductor layer formed by the chemical vapor growth method on an insulating substrate and by executing heat processing at a lower temperature than substrate temperature during the chemical vapor growth processing. CONSTITUTION:When a single crystal of Si is formed by the chemical vapor growth method at a substrate temperature of 900 deg.C on the plane (-102) of a sapphire substrate 1, the region having the plane (011) spreads as a film grows, deteriorating crystal characteristics, but in the film thickness of 200Angstrom or so, the plane (001) becomes the main plane and the crystal characteristics are improved. Then, an amorphous Si 2 is vacuum evaporated in the thickness of about 6,000Angstrom under a pressure of 10<-1> Torr on such a sample. Next, it is annealed under the N2 atmosphere under a temperature of 600 deg.C and thereby a layer 3' can be formed by the solid phase epitaxial growth method. According to this constitution, a semiconductor single crystal film 3' having excellent crystal characteristics can be obtained on the insulating substrate by controlling the interface reaction on the semiconductor layer and insulative substrate. In addition to the sapphire, the beryllia can also be used and this method is also effective for preparation of multielement system compound semiconductor film. |
