| 摘要 |
PURPOSE:To reduce the photoetching steps by forming a field oxidized film by utilizing the selective oxidation of polycrystalline Si. CONSTITUTION:A gate oxidized film 203 and a gate electrode 204 made of polycrystalline Si containing N type impurity are formed on a P type Si substrate 201. A thick oxidized film 205 is formed around the electrode 204, and polycrystalline Si 207 is formed on the overall surface. Then, a nitrided film 210 is patterned for the region to be formed with source and drain regions. Subsequently, with the film 210 as a mask the Si 207 is selectively oxidized, thereby forming a field oxidized film 202. Then, the film 210 is removed, and an N type impurity is diffused by thermal diffusion through the Si 207, thereby forming source and drain regions 206. Thereafter, an interlayer insulating film 208 is formed, a contacting window is opened, and wiring metal 209 is used to wire. According to this method, the photoetching steps can be reduced, thereby improving the yield. |
