| 摘要 |
PURPOSE:To obtain wirings which are not disconnected by forming a double structure with at least two types of an impurity-doped region, a polycrystalline Si film, the first layer metal film and the second layer metal film when the wirings of double structure of power source electrode wirings, gate electrode wirings, etc. are formed on a semiconductor device. CONSTITUTION:An intersection where wirings are crossed is composed of wirings 11 made of polycrystalline Si, wirings 12 similarly made of polycrystalline Si, sub wiring shank 13 made of the first layer metal wiring film, and sub wiring branch 14 made of impurity-doped region. Further, A sub wiring shank 15 made of the first layer metal wiring film and a sub wiring branch 15 made of the second metal wiring film are also formed. In this manner, the wirings become a double structure, and even if one of the wirings is disconnected, it can be supplemented with another wiring, thereby eliminating the stoppage of the function of the device to be adapted for a display panel for a television picture display using a liquid crystal. |
