| 摘要 |
PURPOSE:To improve accuracy of processings by forming a flat surface organic substance film to a material having a stepped part or dents or projected areas to be processed, forming an organic substance mask providing an inorganic substance film mask and by etching such material to be processed. CONSTITUTION:A photo resist 8 is rotatingly coated on an Al-Si alloy film 6 of MOSFET, such photo resist is exposed by ultra violet ray using a mask having thick and thin areas in accordance with high and low levels and developed. Thereby the surface is almost flattened. Then, an Al film 9 is vacuum deposited, a thin resist film 10 is formed and these are exposed and developed. Thereby, the surface becomes flat, Al 9 prevents disturbed reflection from the base material and a highly accurate mask can be obtained. The Al 9 is anisotropically etched by CCl4 and O2. Thereafter, the resist film 8 is etched by the gas mainly composed of O2, and Al-Si alloy 6 is etched by the gas mainly composed of CCl4. According to this constitution, a highly accurate pattern can be produced without deformation of pattern due to stepped parts and dent or projected portions of base material and without any disable resolution. |
