| 摘要 |
PURPOSE:To eliminate a crack which occurs at a protective film in a semiconductor device by covering the entire surface with an insulating film when electrode wirings are formed on the element region of a semiconductor substrate, allowing the insulating film to remain by reactive ion etching only on the side wall of the electrode wirings and then covering the overall surface with the protective film, thereby smoothening the side surface of wirings. CONSTITUTION:An SiO2 film 2 and an Al film 3 are laminated and covered on an Si substrate 1, thereby forming a photoresist film 4 of the prescribed pattern, and the film 4 as a mask an Al film 3 is formed as an electrode wiring layer of desired size by employing CCl4-Cl2 series gas. Subsequently, the film 4 is removed, an SiO2 film 5 is formed by a plasma CVD method using SiH4-O2 series gas on the overall surface, is etched with CF4-H2 gas, thereby removing the film 5 until the surface of the film 3 is exposed. In this manner, a thick protective film 6 is formed by a CVD method using PH3-O2 series gas on the overall surface. Thus, a crack to occur at the film 6 can be entirely eliminated. |
