| 摘要 |
PURPOSE:To prevent dusts from adhering to the surface of an insulator and an impurity in an amorphous substrate from diffusing into a thin Si film by accumulating by a CVD device oxidized Si or nitrided Si on the substrate, and the continuously forming the thin Si film. CONSTITUTION:An amorphous substrate 3 is placed in a CVD deposition chamber 1, is heated to the prescribed temperature, and SiH4, O2 and N2 are respectively flowed via pipes 4, 5, 7. Then, an SiO2 is accumulated on the substrate 1. When PH3 of a pipe system 6 is added at this time, it becomes phosphorus glass PSG. Then, pipe systems 4, 7 are used and SiH4, N2 are flowed. Then, an amorphous or polycrystalline Si is accumulated continuously on the substrate 1 adhered with the SiO2. The element (FET) which is thus manufactured with the thin Si film obtained as above can obtain mutual conductance which is larger by several times than the element formed by using the thin Si film obtained by CVD again. |
