| 摘要 |
PURPOSE:To obtain an Si film having good crystallinity with less implantation of Al by growing an Si film at a low temperature until a continuous Si film is grown on a sapphire single crystal substrate when the Si film is continuously covered on the substrate and then laminating the second Si film on the continuous film by raising the temperature. CONSTITUTION:(Anti 1,0,1,2) sapphire substrate 1 is prepared, H2 gas is used as carrier gas, SiH4 gas is used as source gas, and the substrate is heated to 900 deg.C. Then, the first Si film is grown in approx. 100A thick while maintaining the growing temperature at 1.2mum/min., the SiH4 gas is once stopped, and the temperature of the substrate is set to 950 deg.C. Subsequently, the second Si film 3 is again grown at the growing speed of 1.2mum/min. until the thickness becomes 6,000Angstrom , thereby obtaining an SOS substrate having less carrier mobility and drain leakage current. |
