| 摘要 |
PURPOSE:To obtain gradual circumference of opening in order to prevent disconnection by providing an opening to an insulating portion on an Si substrate through the etching thereto with the mask coated on the area other than the opening area and by executing the reactive ion etching by the mixed gas of C, F and H after removing the mask. CONSTITUTION:A window is opened 4 by coating a resist mask 3 to an SiO2 2 on an Si substrate. A window is opened on the SiO2 2 by the reactive ion etching using CF4 and H2 and the mask 3 is removed. An inclination of about 45 deg. is formed at the circumference of window by the reactive ion etching using C3F6 and H2. The flat part is hardly etched and C-F polymer layer is adhered but it caneasly be removed by O2 plasma etc. Next, when Al layer 5 is formed, an inclined portion of window is formed in the same thickness as the flat portion and disconnection of wirings is easily generated. An inclined angle can be controlled by a flow rate of H2 and an etching time. When flow rate of H2 is low, inclination becomes sharp, and when it is 9cc/min., inclination becomes about 45 deg.. |
