| 摘要 |
PURPOSE:To make easy the lateral growth of epitaxial crystal and form a semiconductor single crystal film by depositing a metal or matal silicide at an aperture on an insulating film, depositing a polycrystal or amorphous semiconductor film thereon the thereafter irradiating a laser beam thereto. CONSTITUTION:An SiO2 film 2 is fomed on an Si substrate 1 by the general process, and an aperture is formed after removing a film 2 from the area where will be seed-crystallized. Then, a cobalt film 5 is vacuum-deposited in the specified thickness and the film 5 is removed from the area other than the aperture. Thereafter, a polycrystalline silicon film 3 is deposited by the CVD method under a reduced pressure. The silicon film 3 is annealed by irradiating electron beams or laser beams 4 on said silicon film 3. The silicon film 3 is easily single- crystallized through lateral epitaxial growth from the aperture. |
