| 摘要 |
PURPOSE:To obtain an MOS type transistor device, wherein a punch through voltage is enhanced, a high speed operation is possible, and the control of a threshold voltage value of a channel operation is not difficult, by providing deep channel doped layers on the part of a source of a side and on the part of a drain side except the central part of a region beneath the channel. CONSTITUTION:Deep channel doped layers 4 are separated into the parts of a source region 1 and the drain region 2 on the side of the channel 12. The deep channel doped layers 10 and 11, which are extended to vertical direction, are provided. A voltage applied to a gate electrode 5 is increased. The depletion layer in the source region 1 and the depletion layer in the drain region 2 are extended and connected in order to yield punch through. For this purpose, they should be extended in vertical direction along the doped layers 10 and 11 as shown by arrows. Therefore the breakdown resistance voltage characteristic against the punch through is improved. Since the high impurity concentration region is not present at the central part beneath the channel, the control of the threshold voltage of the channel operation is easy, and the substrate constants do not become high. Therefore the high speed operation is not hampered. |
