| 摘要 |
PURPOSE:To improve the yiele rate and the performance, by forming a thin film comprising at least one layer of molybdenum and molybdenum silicide between a transparent conducting film and a-Si, thereby preventing the diffusion of the element constituting the transparent conducting film into the a-Si from the transparent conducting film. CONSTITUTION:The glass substrate having a transparent conducting film 22 is used as a substrate 21. It is washed with acetone, alcohol, and pure water utilizing ultrasonic waves. Thereafter, Mo or MoSi2, or both are evaporated into two layers by an electron beam or resistive heating. The optimum thickness of the film is different depending on the transmittance of Mo and MoSi2 films, capability for preventing diffusion of the element constituting the transparent conducting film into the a-Si, and manufacturing conditions of the a-Si, but it is usually 30-200Angstrom . An a-Si layer 24 and a metal electrode 25 are attached on a metal film 23 and the battery is completed. Since the metal film 23 is thin, the amount of the light transmission is decreased only by 15-20%, and short circuit current is decreased by 10-20%. However, since a leaking current is decreased, a release voltage and curve factors are improved, and transducing efficiency is improved. |
