发明名称 Organometallic adducts.
摘要 <p>A method of preparing an adduct suitable for conversion into a compound semiconductor of formula M&lt;1&gt;(R&lt;1&gt;)x.(Q(R&lt;2&gt;)y)z where M&lt;1&gt; is a Group II or Group III metallic element, Q is a Group VI or Group V element which is able to combine with M&lt;1&gt; to form the required compound semiconductor, (R&lt;1&gt;)x and (R&lt;2&gt;)y each independently represents a plurality of organic radicals which are the same or diffeent radicals and x represents an integer equal to the valency of M&lt;1&gt;, y represents an integer equal to the valency of Q and z represents an integer equal to 1 or 2, is characterised in that a precursor adduct of the form M&lt;1&gt;(R&lt;1&gt;)x.L is reacted with a compound Q(R&lt;2&gt;)y, the precursor adduct being less stable than the required adduct suitable for conversion into the compound semiconductor, L being a radical which is less electron donating than Q(R&lt;2&gt;)y. If x = 3 then y = 3 and z = 1. If x = 2 then z = 1 or 2 and yz = 2. The radical L is provided by a solvent which is an aliphatic ether having between 3 and 12 carbon atoms, preferably a cyclic ether having betwen 3 and 8 carbon atoms. For example L may be provided by tetrahydrofuran or dioxan. The preferred procursor adducts which are of the form M&lt;3&gt;(R&lt;3&gt;)3.thf where M&lt;3&gt; is indium or gallium, R&lt;3&gt; is C1 to 7 alkyl and thf is tetrahydrofuran are also described.</p>
申请公布号 EP0080349(A1) 申请公布日期 1983.06.01
申请号 EP19820306184 申请日期 1982.11.19
申请人 THE SECRETARY OF STATE FOR DEFENCE IN HER BRITANNIC MAJESTY'S GOVERNMENT OF THE UNITED KINGDOM OF GREAT BRITAIN AND 发明人 MULLIN, JOHN BRIAN;HOLLIDAY, ARTHUR KENNETH;COLE-HAMILTON, DAVID JOHN;JONES, ANTHONY COPELAND
分类号 C07F3/02;C07F5/00;C07F9/50;C25B3/12;(IPC1-7):07F5/00;07F3/08;07F9/50;01L21/20 主分类号 C07F3/02
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