摘要 |
<p>A method of preparing an adduct suitable for conversion into a compound semiconductor of formula M<1>(R<1>)x.(Q(R<2>)y)z where M<1> is a Group II or Group III metallic element, Q is a Group VI or Group V element which is able to combine with M<1> to form the required compound semiconductor, (R<1>)x and (R<2>)y each independently represents a plurality of organic radicals which are the same or diffeent radicals and x represents an integer equal to the valency of M<1>, y represents an integer equal to the valency of Q and z represents an integer equal to 1 or 2, is characterised in that a precursor adduct of the form M<1>(R<1>)x.L is reacted with a compound Q(R<2>)y, the precursor adduct being less stable than the required adduct suitable for conversion into the compound semiconductor, L being a radical which is less electron donating than Q(R<2>)y. If x = 3 then y = 3 and z = 1. If x = 2 then z = 1 or 2 and yz = 2. The radical L is provided by a solvent which is an aliphatic ether having between 3 and 12 carbon atoms, preferably a cyclic ether having betwen 3 and 8 carbon atoms. For example L may be provided by tetrahydrofuran or dioxan. The preferred procursor adducts which are of the form M<3>(R<3>)3.thf where M<3> is indium or gallium, R<3> is C1 to 7 alkyl and thf is tetrahydrofuran are also described.</p> |
申请人 |
THE SECRETARY OF STATE FOR DEFENCE IN HER BRITANNIC MAJESTY'S GOVERNMENT OF THE UNITED KINGDOM OF GREAT BRITAIN AND |
发明人 |
MULLIN, JOHN BRIAN;HOLLIDAY, ARTHUR KENNETH;COLE-HAMILTON, DAVID JOHN;JONES, ANTHONY COPELAND |