| 摘要 |
PURPOSE:To permit heating to only the desired part of semiconductor thin films by a method wherein a difference in the absorption coefficient of semiconductor films by wave length is utilized and filter penetrating light within a desired wave length range is provided between a light source and a wafer. CONSTITUTION:A wafer is formed by a substrate 1, semiconductor films 2a and 2b. A light source 4 produces light including visible light, infrared light, and a lens system 3 adjusts the light from the light source so that the light may equally be aimed at the whole face of the wafer. A filter 6 penetrates only visible light. Therefore, only the visible light aims at the whole face of the semiconductor thin films 2. The semiconductor thin film 2a is provided with the structure of absorbing the visible light when the light is to being irradiated for heat treatment. The numerical 2b is the region not to be provided with heat treatment in this process and is of structure absorbing only the infrared light. The filter 6 penetrates no infrared light. Thus, the region 2b can not absorb light or accept heat treatment. |
