| 摘要 |
<p>PURPOSE:To contrive the improvement of the yield of a semiconductor device wherein a part of the wiring pattern is selectively cut, and the improvement of reliability by a method wherein the first energy ray irradiation is performed via an insulation film which coats the wiring pattern, and accordingly a cavity left behind is eliminated by the second energy ray irradiation. CONSTITUTION:As for the wiring to be cut, the first energy ray irradiation is performed to a projection 2 and the neighborhood thereof. By this irradiation, the polycrystalline Si constituting the wiring 3 is heated and fused, then the polycrystalline Si on the projection 2 is led into the part wherein the thickness of the first insulation film 1 except for the projection 2 and accordingly forms a deposit 5, and the wiring 3 is cut. In the neighborhood of the projection 2 wherein the wiring 3 is cut, the cavity 6 is left under the second insulation film 4. The energy ray irradiation is performed to the second insulation film 4 on the position of cutting the wiring 3 wherein the cavity 6 is left. By this second irradiation, the second insulation film 4 is heated and fused resulting in the elimination of the cavity 6.</p> |
