| 摘要 |
PURPOSE:To obtain a semiconductor device of a structure wherein In metallic poles are unnecessitated by a method wherein an infrared ray detection element and a charge coupling device (CCD) transferring the detection signal are formed monolithically into the same substrate in a continuous process. CONSTITUTION:On a detection element substrate constituted by forming the infrared ray detection element 102 on a compound semiconductor substrate 2 in a matrix form, a thin film transistor 103 is formed via an insulatin film in a matrix form in opposition to the detection element, the transistor 103 and the detection element 102 are electrically connected each other, and, on the substrate, the wiring to read the infrared ray detection signal is connected to the transistor resulting in a monolithic formation. On the detection element substrate, a scanning circuit of the infrared ray detection element wherein a thin film transistor is used is monolithically provided. Thereby, the reliability of a device improves, and the device which detects the detection element signal is formed by using amorphous Si, thereby obtaining the titled device at low cost. |
