| 摘要 |
A photosensitive element comprises a support (12) bearing a low-resistance contact electrode and a layer of n-type or p-type CdTe (20) on the electrode. The electrode, the CdTe layer or both thereof comprise a dopant for the CdTe and the electrode further comprises an oxidized metal, the reduced form of the metal being capable of reducing the oxidized form of the dopant. The element may be produced in thin film format whereon the CdTe is vapor deposited. The element is particularly suitable for preparing photovoltaic cells. |
