| 摘要 |
PURPOSE:To improve the band characteristic by the reduction of the input reflection coefficient of a GaAs MESFET, by providing an inductance to a source. CONSTITUTION:The GaAs MESFET chip 6 is mechanically connected to a conductive layer 2 for source electrode, and the source electrode 7, the second gate electrode 8, the first gate electrode 9 and drain electrode 10 are connected respectively to the conductive layer 2 for source electrode, conductive layer 3 for the second gate electrode, conductive layer 4 for the first gate electrode and conductive layer 5 for drain electrode by metallic fine wires 11. Further, a conductive layer 12 for inductance wherein the conductive layer for source electrode is extended is provided. |
