| 摘要 |
PURPOSE:To improve manufacturing property and to enhance performance quality, in the field effect transistor having a source grounded electrode with a source via hole structure having the electrodes of a source, a drain and a gate on the same main surface, by constituting the configuration of the source via hole by a rectangle which is surrounded by four 110 surfaces. CONSTITUTION:A photomechanical processing pattern before etching is not of a circular shape but a rectangular pattern 4 whose four sides have the direction of <110>. The four <110> surfaces all comprise surfaces of 50% Ga and 50% As like a <100> surface, i.e. the surfaces do not have the different ratio of Ga and As. Therefore, the etching is progressed in an istropic mode, and a pillar shaped hole is obtained. Therefore, even though the depth of the hole is deep, i.e. the thickness of a wafer is thick, the configuration of the obtained hole is not different. The via hole having the same configuration as that of a desired pattern can be obtained. |
