| 摘要 |
<p>This invention relates to field-effect transistors comprising a floating gate. The threshold voltage of a transistor such as this may be modified by the injection of electrical charge carriers at an intermediate level between the control gate and the substrate which is formed by the floating gate. The structure of the transistor is such that these injections of carriers are punctiform because the production process, which is automatically aligned, allows precise positioning of the overdoped injection regions. Application to electrically erased non-volatile memory circuits.</p> |
