| 摘要 |
PURPOSE:To settle the difficulty in regard to wiring by a method wherein films having metallically electric conductivity are made to grow hetero-epitaxially previously on a single crystal substrate in expectation to be used as one of electrodes afterward. CONSTITUTION:The layer type matters 15, 18 having metallically electric conductivity are made to grow hetero epitaxially on the insulating substrate 11. After then, an Si layer 14' having comparatively high resistance the same with an Si evaporation layer 14 is made to grow hetero epitaxially to make Si as to envelop a lattice. At this time, the matters 15, 18 are used respectively as one of the electrodes. Accordingly, because the length of the active part is short, switching can be performed in a short time of 1/5-1/10 of the usual lateral type device. |
