| 摘要 |
PURPOSE:To form the amorphous Si layer having sufficiently low dark resistance and having also favorable photo sensitivity by a method wherein the temperature of a substrate is held at 350-450 deg.C, and moreover the depositing speed of the semiconductor material is held at 0.1-80Angstrom /sec. CONSTITUTION:The flat plate type substrate 2 is arranged in a bell jar 1, and a a silicon evaporation source 3 is arranged on the lower side thereof. A negative DC bias voltage is applied from a DC power source 4 to the substrate 2. The substrate 2 is heated in the range of 350-450 deg.C by a heater 11. The depositing speed of the semiconductor material is held at 0.1-80Angstrom /sec. Inducing tubes 12, 13 for modifying gas are arranged in the bell jar 1, and discharge tubes 14, 15 for activation and ionization of modifying gas are provided in the inducing tubes thereof. |
