| 摘要 |
PURPOSE:To prevent the decrease in the yield rate and the deterioration in quality due to exforiation of photoresist by a method wherein a semiconductor substrate with a photoresist is vacuum-attracted on the base, and a developing solution is jetted out or sprayed from a nozzle on the circumferential part and the side face only of the semiconductor substrate. CONSTITUTION:A developing device consists of the base 3, which vacuum-attracts the semiconductor substrate 1 having a photoresist and makes a rotatory movement through the intermediary of a motor, and a nozzle 5 to be used to jet out or spray a developing solution on the circumferential part and the side face only of the substrate 1. After the center part on the back side of the substrate 1 has been vacuum-attracted on the base 3, a rotatory movement is given to the base 3 by the motor 2. At the same time, the developing solution is jetted out to the circumferential part and the side face only of the substrate 1 from the nozzle 5 through a pipe line. Thereupon, an ordinary photoresist pattern is formed on the greater part of the substrate 1, and the photoresist on the circumferential part and the side face only of the substrate 1 can be removed completely. |
