| 摘要 |
PURPOSE:To improve the characteristics of a reverse transistor by setting impurity concentration so that the impurity concentration of a layer at the substrate side is made higher and the impurity concentration of the layer of the surface lower when layers functioning as the emitter, base and collector of the reverse transistor are formed onto the substrate. CONSTITUTION:The layer n1 with 400nm thickness containing Sb is concentration such as 5X10<18>cm<-3>, the layer p1 with 150nm thickness containing Ga in concentration such as 1X10<17>cm<-3> and the layer n2 with 300nm thickness containing Sb in concentration such as 1X<16>cm<-3> are shaped onto the p type Si (100) substrate 4 by using a molecular beam epitaxial method. The reverse transistor in which the layer n1 is used as the emitter, the layer p1 as the base and the layer n2 as the collector is shaped by employing an ion implantation method. The beta of the reverse transistor is improved because the impurity concentration of the layer n1 is made higher and that of the layer n2 lower. Said technique is particularly effective when it is applied to the reverse transistor forming an I<2>L. |
