FREMGANGSMADE TIL DOPING AF TINOXID

摘要

The invention is directed primarily to a method of doping tin oxide with Ta2O5 and/or Nb2O5 using pyrochlore-related compounds derived from the system SnO-SnO2-Ta2O5-Nb2O5 for use in thick film resistor compositions. The invention is also directed to thick film resistors containing the above-described pyrochlore-related compounds and to various compositions and methods for making such thick film resistors.